View JCS1SN60RC-O-R-N-B_8977787.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 / 1 1 n ??? n - channel mosfet j cs 1 s n60 c order codes ? marking ? package halogen free ? packaging d evice w eight jcs1 s n60 t c - o - t - n - a jcs1 s n60 t c to - 92 no brede 0.216 g(typ) jcs1 s n60 v c - o - v - n - b jcs1 s n60 v c ipak - s2 no tube 0.35 0 g(typ) jcs1 s n60 r c - o - r - n - b jcs1 s n60 r c dpak no tube 0.3 00 g(typ) ? package ? main characteristics i d 0. 6 a to - 92 1. 2 a ipak/dp k a v dss 6 00 v rdson - max vgs=10v 8.5 ? qg - typ 4.5 nc ? ? ??? ? applications ? high efficiency switch mode power supplies ? electronic lamp ballasts based on half bridge ? ? ? ? c rss ( ? 4. 9 pf) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? l ow gate charge ? low c rss (typical 4.9 pf ) ? fast switching ? 100% avalanche tested ? improved dv/dt capa bility ? rohs product ? order message to - 92 r
jcs1s n60c 20 1 510b 2 / 1 1 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? parameter symbol ? value unit j cs 1 s n60 t c j cs 1 s n60 v c / r c ???? dss 600 600 v ? d t=25 t=100 ? ? 1 drain current - pulse dm 2.0 4.0 a ??? gss 30 v ? ? 2 single pulsed avalanche energy as 4 8 mj ? ? 1 avalanche current ar 1.0 a ?? ? 1 ar 3. 6 mj ??? ? 3 peak diode recovery dv/dt ? d t c =25 - derate above 25 ??? j stg - 55 ?? l 300 r
jcs1s n60c 20 1 510b 3 / 1 1 e lectrical c haracteristi cs ? parameter symbol tests conditions min typ max units ? off C characteristics ??? drain - source voltage bv dss i d =250 a, v gs =0v 6 00 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d = 1m a, referenced to 2 5 - 0. 6 0 - v/ ???? zero gate voltage drain current i dss v ds = 6 00v,v gs =0v, t c =25 - - 1 0 a v ds = 48 0v, t c =125 - - 1 0 0 a ?? gate - body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2 .0 - 4 .0 v ?? static drain - source on - resistance r ds(on) v gs =10v , i d = 0. 6 a - 8 8.5 ? forward transconductance g fs v ds = 4 0v , i d = 0. 5 note 4 - 0.8 - s ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 247 319 pf output capacitance c oss - 23 30 pf reverse transfer capacitance c rss - 4.9 6.4 pf r
jcs1s n60c 20 1 510b 4 / 1 1 e lectrical c ha racteristics switching characteristics ?? turn - on delay time t d (on) v dd = 30 0v,i d = 1. 2 a,r g =25? note 4 5 - 1 5 45 ns ? turn - on rise time t r - 46 105 ns ?? turn - off delay time t d (off) - 26 62 ns ?? turn - off fall time t f - 37 82 ns ? total gate charge q g v ds = 48 0v , i d = 1. 2 a v gs =10v note 4 5 - 4.5 4.9 nc ?? gate - source charge q gs - 1. 0 - nc ?? gate - drain charge q gd - 2.5 - nc ????? drain - source diode characteristics and maximum ratings maximum con tinuous drain - source diode forward current i s - - 1. 2 a maximum pulsed drain - source diode forward current i sm - - 4 . 8 a ? drain - source diode forward voltage v sd v gs =0v, i s = 1. 2 a - - 1. 4 v ?? reverse recovery time t rr v gs =0v, i s = 1. 2 a di f /dt=100a/ s (note 4) - 1 85 - ns ? reverse recovery charge q rr - 0. 51 - c ? parameter symbol max unit jcs 1 s n60 t c jcs 1 s n60 v c /r c ??? thermal resistance, junction to case r th(j - c) 4. 75 /w ? thermal resistance, junction to ambient r th(j - a) 120 1 0 5 /w ? ? 1 ? 2 l = 59 mh, i as = 1. 2 a, v dd =50v, r g =25 ?, ? t j =25 3 i sd 1. 2 a,di/dt 2 00a/ s,vddbv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l= 59 mh, i as = 1. 2 a, v dd =50v, r g =25 ? , starting t j = 25 3 i sd 1. 2 a,di/dt 2 00a/ s,vddbv dss , starting t j =25 4 pulse test pulse width 300s,duty cycle2 5 essentially independent of operating temperature r
jcs1s n60c 20 1 510b 5 / 1 1 electrical characteristics (curves) t ransfer characteristics o n - resistance variation vs. drain current and gate voltage b ody diode forward voltage variation vs. source current and temperature c apacitance characterist ics gate charge characteristics o n - region characteristics r 0.1 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 25 150 v sd [v] i dr [a] 1 10 0.1 1 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250s pulse test 2. t c =25 i ds (on ) [a] v ds [v] 2 4 6 8 10 0.1 1 10 notes 1.250s pulse test 2.v ds =40v i d [a] v gs [v] 25 150 0.0 0.5 1.0 1.5 5 6 7 8 9 10 11 12 13 note t j =25 v gs =10v r ds (on ) [ ] i d [a] v gs =20v
jcs1s n60c 20 1 510b 6 / 1 1 electrical characteristics (curves) b reakdown voltage variation vs. temperature o n - resistance variation vs. temperature maximum safe operating area for jcs 1 s n60 t c m aximum drain current vs. case temperature m aximum safe operating area for jcs1 s n60 v c /r c r -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes 1. v gs =0v 2. i d =250 ? a bv ds (normalized) t j [ ]
jcs1s n60c 20 1 510b 7 / 1 1 electrical characteristics (curves) transient thermal response curve for jcs 1 s n6 0 t c transient thermal response curve for jcs1 s n60 v c /r c notes : 1. z j a (t) = r(t) * r ja 2. duty factor, d=t1 /t2 3. t jm C t a = p dm * z j a (t) r 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 0.01 0.1 1 0.5 single pulse 0.01 0.02 0.05 0.2 0.1 r(t) (normalized) t1 [ms]
jcs1s n60c 20 1 510b 8 / 1 1 ? package mechanical data to - 9 2 u nit mm r
jcs1s n60c 20 1 510b 9 / 1 1 ? p ackage mechanical data ipak s2 u nit mm r
jcs1s n60c 20 1 510b 10 / 1 1 ? package mechanical data dpak reel u nit mm r
jcs1s n60c 20 1 510b 11 / 1 1 ? 1. ????????? ?????? ???? 2. ???? ? ?? 3. ????? ?????? 4 . ??? note 1. jilin sino - microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when orderi ng , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co . , ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? www.h wdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 : 86 - 432 - 6 4671533 c ontact jilin sino - microelectro nics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site www.hwdz.com.cn m arket d epartment add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 4675688 6 4678411 fax: 86 - 432 - 6 4671533 r

▲Up To Search▲

Price & Availability of JCS1SN60RC-O-R-N-B

	To Download JCS1SN60RC-O-R-N-B Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .